eng Ansari Education and Research Society Journal of Ultra Scientist of Physical Sciences April 2018 30 4 57 63 http://dx.doi.org/10.22147/jusps-B/300403 1466 article KAVITA MALL 1 ABHINAV SHUKLA 1 U.N. TRIPATHI 2 MANISH MISHRA (manish.ddu1976@gmail.com) 1 Department of Electronics, DDU Gorakhpur University, Gorakhpur-273009 (India) Department of Computer Science, DDU Gorakhpur University, Gorakhpur-273009 (India) <p style="text-align:justify">The presented paper deals with the effect of UV radiation and change in rate of recombination on the operation of metal oxide gas sensors. The performance of a simple metal oxide sensor is simulated first and the relation between absorbed gas concentration and resistance is monitored in absence of UV radiation. Later, the same performance is monitored in the presence of UV radiation on the sensor with the occurrence of surface recombination phenomenon. The performances are simulated on MATLAB. The Grain boundary resistance (Rgb), neck resistance (Rn) and total resistance (R) were obtained by simulating standard equation on MATLAB software. The effect of the surface recombination on absorption of gas concentration and change in resistance is also taken into account. It has been observed that the resistance of the sensors depends on the grain size (L), flux density, absorbed gas concentration (Nr), depletion width (W).</p> https://ultraphysicalsciences.org/paper/1466/ Semiconductor Gas Sensor Matlab Environmental monitoring