eng Ansari Education and Research Society Journal of Ultra Scientist of Physical Sciences October, 2017 29 10 285 291 http://dx.doi.org/10.22147/jusps-B/291005 859 article G.K. PANDEY 1 U.N. TRIPATHI 2 MANISH MISHRA (manish.ddu1976@gmail.com) 1 Department of Electronics, D.D.U. Gorakhpur University, Gorakhpur-273009 (India) Department of Computer Science, D.D.U. Gorakhpur University, Gorakhpur-273009 (India) <p style="text-align: justify;">In this paper, the design and simulation of cylindrical, co-axial, Carbon Nanotube Field Effect Transistor (CNTFET) is presented using online Fettoy tool of Nanohub. This tool can provide various characteristics of CNTFET, like transfer characteristics, output characteristics, average velocity vs. gate voltage etc. To simulate the CNTFET we have considered the value of diameter of carbon nanotube 1nm which is of (13,0) chirality. Gate insulator thickness is taken as 1.5nm and the dielectic constant of the material used as gate oxide is k=20 , which is the value shown by ZrO2.</p> <p style="text-align: justify;">A comparison between designed CNTFET and conventional MOSFET shows improvement of various parameters which plays a significant role in design of logic circuits. With these improved properties of CNTFETs it can be concluded that it is very useful in designing of reversible logic circuits. Also, it is very efficient in terms of power consumption, speed of operations, and leakage current over conventional MOSFETs</p> https://ultraphysicalsciences.org/paper/859/ Carbon Nanotube Field effect transistor Simulation FETToy